PART |
Description |
Maker |
SBL51414X SBL51414 SBL51414RE9466 |
BIDI Transceiver Optical Module From old datasheet system BIDI TM Transceiver Optical Module 1300 nm Emitting/1550 nm Receiving Function,Low Power
|
Infineon
|
FESD05BLCIS |
Extremely Low Capacitance TVS Diode
|
FutureWafer Tech Co.,Lt...
|
GI811 GI812 GI816 GI818 GI810 GI814 GI817 |
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 560uF; Voltage: 63V; Case Size: 12.5x40 mm; Packaging: Bulk Glass Passivated Junction Fast Switching Rectifier(钝化玻璃结型快速转换整流器)
|
GE Security, Inc. GE[General Semiconductor]
|
PMF370XN |
N-channel mTrenchMOS extremely low level FET N-channel uTrenchmos (tm) extremely low level FET
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
PMWD20XN |
Dual N-channel microTrenchMOS(tm) extremely low level FET DUAL N-CHANNEL UTRENCHMOS EXTREMELY LOW LEVEL FET
|
NXP Semiconductors Philips Semiconductors
|
SBL51214X SBL51214 |
BIDI TM Transceiver Optical Module 1300/1300 nm,Low Power From old datasheet system
|
Infineon
|
BB664 Q62702-B0909 Q62702-B0908 |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance Low series resistance) 硅变容二极管(甚高频电视信号接收器高电容率低串联电感低串联电阻) From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
YSUSB2 YSUSB2.0-5 |
LOW CAPACITANCE LOW CAPACITANCE TVS DIODE ARRAY
|
Yea Shin Technology Co....
|
STP40N65M2 |
Extremely low gate charge
|
STMicroelectronics
|
STD11N65M2 |
Extremely low gate charge
|
STMicroelectronics
|
STD15N60M2-EP |
Extremely low gate charge
|
STMicroelectronics
|